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SiC Wafer Inspection/Review System

[WASAVI Series SICA61]NEW
SiC wafer defect inspection/review system that detects and
reviews crystal defects with high resolution
SiC Wafer Inspection/Review System [WASAVI Series SICA61]
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Applications

  • Evaluation and analysis of SiC epitaxial crystal growth processes
  • Process management of SiC wafer manufacturing
  • Outgoing and incoming inspection of SiC wafers

Features

  • Combination of confocal optics and differential interferometry best suited for SiC wafer
  • Detect crystal defects such as shell pit, stacking fault, carrot and such with high sensitivity
  • Stable defect inspection free from effect of reflected light at the back-surface
  • Review function of high resolution
  • Defect map display function, defect classification function and high resolution 3D shape measurement function

Specifications

Tool dimensions (mm)800 (W) x 1000 (D) x 1800 (H)
Wafer size for inspection (mm)6 inchφmaximum
Type of wafer for inspectionBulk SiC, SiC with epitaxial layers
Throughput1 wafer (3 inch φ) / hour
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