Glossary

EAPSM , Att-PSM

Embedded Attenuated Phase Shift Mask
Attenuated Phase Shift Mask
Alias name for half tone type phase shift mask.

EB

Electron Beam
Lithography (exposure) tool for circuit patterns using electron beam.

Electro Luminescence (EL)

Abbreviation for Electro Luminescence. Because semiconductor emits light by applying current, quality of semiconductor can be evaluated by the intensity of the emitted light .

EPL

Electron Projection Lithography
One type of lithography that uses electron beam projection system

Etching

One process method.
By using chemicals or gases, such as acids or alkalis, removal of materials is performed.
This process enables removal of materials of unnecessary part.

EUV

Extreme Ultraviolet
Exposure light source
Light wavelength: 13.5nm

EUVL

Lithography using light source of EUV.
Extra Ultra Violet Light Lithography

EVA

Ethylene-Vinyl Acetate copolymerized resin: This material is most suitable for protection of Solar cells because the resin is highly transparent and resistant to weather. Because crystalline Solar cells are extremely brittle especially against moisture, the Solar cells are usually protected by glass plates and EVA resin.

External Quantum Efficiency (EQE)

For a photo sensitive device, EQE is a ratio of number of carriers generated against number of photon of incident light.