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Mask related

Mask Process Monitoring System

M2351
Product quality monitoring at all the Photomask manufacturing processes Mask Process Monitoring System M2351
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Applications

  • Inspection of glass substrates for Photomask
  • Inspection of substrates with a chromium film and substrates with a MoSi film
  • Inspection of maskblanks after resist coating
  • Inspection of line and space patterns after resist development
  • Inspection of line and space patterns after etching
  • Inspection of line and space patterns after resist separation
  • Review and measurement of defects

Features

  • A mask process monitor system, the first of this kind in the industry, that is compatible with Photomask for semiconductor devices of 90nm or smaller node
  • In addition to maskblanks inspection, mask process monitoring is possible at all the processes such as before and after exposure, after development, after etching, after cleaning and so on, using line and space patterns.
  • Inspection with both transmitted light and reflected light is available.
  • This one system provides both inspection and defect review functions.

Specifications

Substrate Size6025
Defect Detection Sensitivity0.09μm (foreign particles/pinhole),
0.06μm (Defect of line and space pattern)
Inspection Time11minutes to 38minutes (6steps)
Light SourceArgon Ion Laser (488nm)
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