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OPTELICSR Special Page To have more profound knowledge about Confocal Microscope
Debut of an unprecedented Confocal Microscope OPTELICSR S130 equipped with 5 kinds of illumination wavelengths
Speedy nano-region measurement enabled by Mirau interferometric measurement system
Can freely choose a wavelength out of five kinds of wavelengths matching the nature of samples Bright, beautiful and high-resolution image that satisfies eyes of professionals
High quality color image that vividly reproduces even texture of samples System configuration
Speedy nano-region measurement enabled by Mirau interferometric measurement system
Integration of confocal microscope and Mirau interferometric measurement system
Integration of an interferometric measurement system and a 5 wavelength confocal microscope enables nondestructive and noncontact measurement of samples in various fields. Taking advantage of confocal microscope features, high contrast interferometric images can be acquired even for the samples with very low surface reflectivity, and surface roughness measurement can be performed in Angstrom unit accuracy. It goes without saying that images of high resolution and deep focal depth that confocal microscopes provide can be observed. The time for automatically acquiring interferometric image is 2 seconds for 1 set of data, which is realization of very fast measurement speed.
Principle of Mirau interference
Incoming illumination light to objective lens is split into two beams by a semitransparent mirror set at midway between lens and sample and one beam is reflected at sample surface and another beam is reflected at reflecting mirror formed at the lens surface. Both reflected beams are added and interference occurs. When sample surface is in focus position, optical path lengths of both beams become equal and very vivid interference patterns can be observed.
Wavelength selectivity and automatic data acquisition
One click completes automatic acquisition of 3 frame interferometric images and subsequent computation processes after selecting the wavelength most suitable for sample from R (630nm), Y(577nm), and G(546nm) out of 5 wavelength of the microscope. For this reason, interference fringes of optimized contrast can be obtained from the measurement result by using wavelength that shows the highest reflectivity of the sample.

Moreover, combination of two wavelength expands the height measurement range by phase shift method to the maximum of 5μm. Surface roughness measurement of various samples can be calculated using the global standard 3D roughness parameters.
Excellent Operationnality
Two types of interference units, the stage driving type and the objective lens driving type, are equipped for selection, according to measurement purposes.

When lens magnification change or switching to confocal measurement is needed, [stage driving type] is selected, and when large size samples are measured, [objective lens driving type] is needed
Beyond material category, sharp and high-resolution image measurement becomes possible.
Height measurement sample by OPTELICS S130IF Height conversion > Drawing > 3D image
 
Silicon Dioxide Film Pattern ·?????:50×(D1) ·??:284µm×228µm ·????:546nm
Step (film thickness) of transparent oxide film on silicon substrate can be measured using light transmitted through oxide film and reflected at silicon substrate surface along with refractive index difference between air and the oxide film.The pitch of holes is 10μm and the depth is 223nm.
Silicon Carbide ·?????:50×(D1) ·??:284µm×228µm ·????:546nm
Measurement of steps in nano-scale, appearing as spiral stair at growth surface of silicon carbide single crystal.The step height is 6.457nm and the width is 9.660 μm.
Nano-Imprint ·?????:50×(D1) ·??:284µm×228µm ·????:577nm
Measurement of reticular structure of about 50 nm depth formed by Nano-Imprint Technology: Structural distortion generated by pressure under molding at the outskirt of the pattern can be seen.
Compatible with material measurement of various fields, not to speak of semiconductor related materials.
GeCuO3

Steps seen at cleavage plane of GeCuO3 single crystal, known as inorganic spin-Pierls material, are measured. Steps in zigzag configuration ranges from a few nm to about 30 nm.

·?????:50×(D1) ·??:284µm×228µm ·????:546nm
Calcite
Surface of low-solubility crystal “calcite” is slightly solved to form etch pits. Surface irregularity of several tens to several hundreds nanometer depths is measured.
·?????:50×(D1) ·??:284µm×228µm ·????:630nm/546nm(2?????)
Natural Quartz
Observation of prismatic face of natural quartz hexagonal cylinder: Streak shapes of a few tens of nm height are lined up in the direction perpendicular to c axis.
·?????:50×(D1) ·??:284µm×228µm ·????:630nm
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