Lasertec has developed the IC photomask/reticle inspection system "MD3000" with a light source of DUV-line, which is applicable to the next generation's IC design rules 130nm and 100nm, and offered it for sale since April 2001.
Comments
Lasertec's newly developed IC photomask/reticle inspection system "MD3000" is a new generation model of our MD series photomask/reticle inspection systems, which employs DUV-line (wavelength 248nm) as an inspection light source. Combining very high-resolution video signals derived from a newly developed optical system for short wavelength (248nm) with our special high-speed comparison inspection technique, this inspection system provides high defect inspection capability (100nm) as well as applicability to new technology patterns aiming at fine processing. As an IC design rule is approaching 130nm, and further 100nm, inspection of phase shift masks and OPC masks will increase in importance. Thus the model "MD3000" with high applicability to these future masks plays an indispensable role in establishing a next generation process and assuring sufficient yield.
Characteristics
- Inspection method
High sensitivity and high-speed Die-to-Die comparison inspection method with a DUV-line (248nm) light source. - Defect detecting sensitivity
The defect detecting sensitivity is 100nm. Together with the Cell Shift inspection function, this inspection system can detect pattern defects of as little as 80nm. And particles on quartz also can be detected. - Minimum pattern size
The minimum pattern size that can be inspected is 300nm. - Applicability
Highly applicable to advanced masks including phase shift masks and OPC masks. - Automatic optimum sensitivity setting and defect classification
The two automatic functions considerably improve operability. With these functions, this model can be used as a developing tool of the state-of-the-art technology and as a high-level production tool.
Purposes
- Automatic defect inspection at production processes of IC Photomasks and reticles
- Incoming inspection of reticles at advanced wafer processes
- Verification of pattern accuracy for establishing OPC technology and phase shift mask (half-tone, Levenson type) technology
- Simulation of more accurate defect printability using a light source of short wavelength (248nm)
Standard configuration
Main unit, Control unit, and Operation unit
Option
Auto loader, Pellicle / glass side particle inspection system
